| 摘要 |
PURPOSE:To improve the precision of detection of the sort of gas, to miniaturize the element and to save an electric power, by superposing at least one or more element of an oxide semiconductor, while engaging said oxide semiconductor with an electrode for detecting a variation in the electric resistance value thereof. CONSTITUTION:A sandwich structure of one of SnO2, ZnO and WO3, Pd and glass is used as a first element 4a. Moreover, a sandwich structure of one of ZnO, WO3, Ta2O5 and SnO2, Pd and glass is used as a second element 4b. In addition, a sandwich structure of SnO2 and glass, or ZnO2 and glass, is used as an insulating layer 5. The first element 4a, the insulating layer 5 and the second element 4b each of which is formed of said oxide semiconductor are superposed sequentially with the first element 4a laid as the lowest layer. Furthermore, electrodes 3a, 3b, 3c and 3d are provided in such a manner that they are connected to the first element 4a, the insulating layer and the second element 4b respectively as described above. |
