Sensitive positive electron beam resists

摘要

Highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and t-butyl methacrylate (TBM) are disclosed in which a thin film of high molecular weight MAA/TBM copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.