Method of manufacturing a glass passivation semiconductor device

摘要

A method of manufacturing a glass passivation semiconductor device by depositing a glass passivation layer on the surface of a semiconductor junction formed on a semiconductor substrate. First laser beams which can be substantially absorbed in the glass protective material and second laser beams which can be absorbed in the semiconductor substrate are simultaneously irradiated on those portions of the semiconductor substrate on which the glass protective material is deposited, thereby providing a glass passivation layer.