| 摘要 |
PURPOSE:To prevent an adverse effect on an etching, to obtain the titled sensor with excellent reproducibility and to improve the yield of the pressure sensor by forming a silicon diaphragm section through not etching but crystal growth. CONSTITUTION:A crystalline thin-film 11 in approximately 0.2mum thickness is formed on one surface of a silicon single crystal substrate 10 while the other surface of the substrate 10 is coated with etching masks 12 consisting of silicon dioxide. A recessed section 13 reaching to the crystalline thin-film 11 is formed on the other surface side of the substrate 10 through a selective etching by utilizing the etching masks 12. A silicon single crystal film 14 is shaped on the inner surface of the recessed section 13. Such a crystalline film is formed in such a manner that an unnecessary section is covered with a mask and the crystalline film is shaped through normal silicon vapor phase epitaxial growth, and the silicon single crystal film 14 also grows normally on the surface of the crystalline thin-film 11 because the thin-film 11 consists of spinel, etc. at that time. The crystalline thin-film 11 is removed, the silicon single crystal film on the lower surface of the thin-film 11 is left as a silicon diaphragm section 14a, and piezoresistors 15, 15... are diffused and formed on the upper surface of the diaphragm section. |
