| 摘要 |
PURPOSE:To obtain an electrophotographic sensitive body low in residual potential and stable in acceptance potential by forming an Se-Te halogen layer and an Se-Te layer on a conductive substrate. CONSTITUTION:The first evaporation source contg. 3-14wt% Se and Te and 2- 1,000ppm halogen and the second evaporation source contg. 3-25wt% Se and Te are arranged in a vacuum vessel, and the first evaporation source is heated to vapor deposit a 20-80mum thick Se-Te halogen layer 2 on a conductive substrate 1, and then, the second evaporation source is heated to vapor deposit a 2-10mum thick Se-Te layer 3 on the layer 2. |
