| 摘要 |
PURPOSE:To obtain a light receiving member suitable for using light capable of interference, such as laser beams, and superior visible image by forming a pair or more of nonparallel interfaces in a minute part in a specified a-Si type light receiving layer formed on a substrate, and arranging a large number of such interfaces at least in one direction in planes perpendicular to the layer thickness direction. CONSTITUTION:The multilayer type light receiving layers 102, 103 having at least a photosensitive layer composed of an amorphous material containing Si, and Ge or/and Sn is formed on a substrate 101, and the layers 102, 103 contain at least one of O, C, and N, and at least one of pairs of nonparallel interfaces are formed in a minute part within one cycle of a rugged shape, and a large number of these interfaces are arranged at least in one direction in planes perpendicular to the layer thickness direction, thus permitting interference fringes caused by using the interfering light, such as laser beams, as a light source to be prevented, a good-quality visible image to be obtained, photosensitivity in all the visible wavelength region, especially, in a longer wavelength region to be enhanced, matching with semiconductor laser beams to be improved, light responsivity to be enhanced, superior electrophotographic characteristics to be obtained and consequently, a high-quality image high in density and resolution to be obtained. |
