首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Elastisches Gleichlaufgelenk
摘要
申请公布号
DE3311115(C1)
申请公布日期
1984.10.04
申请号
DE19833311115
申请日期
1983.03.26
申请人
UNI-CARDAN AG, 5200 SIEGBURG, DE
发明人
BALKEN, JOCHEN, DR.-ING., 5206 NEUNKIRCHEN-SEELSCHEID, DE;BEIGANG, WOLFGANG, DIPL.-ING., 5200 SIEGBURG, DE;JOHN, THOMAS, DIPL.-ING., 8900 AUGSBURG, DE;JOHN THOMAS DIPL-ING
分类号
F16D3/16;F16D3/00;F16D3/202;F16D3/221;F16D3/80;F16F13/08;F16F15/10;(IPC1-7):F16D3/80;F16D3/14
主分类号
F16D3/16
代理机构
代理人
主权项
地址
您可能感兴趣的专利
ORGANIC ELECTROLUMINESCENCE DEVICE
ORGANIC ELECTROLUMINESCENCE ELEMENT AND MATERIAL FOR ORGANIC ELECTROLUMINESCENCE ELEMENT
Induction of Force performed by the Piezoelectric Materials
Extremely Low Resistance Composition and Methods for Creating Same
GRAPHENE THIN FILM WITH FOLDED CONFIGURATION, THERMOELECTRIC DEVICE INCLUDING GRAPHENE THIN FILM AND FABRICATION METHOD THEREOF
LIGHT EMITTING CHIP
CURABLE RESIN COMPOSITION, CURABLE RESIN COMPOSITION TABLET, MOLDED BODY, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR COMPONENT AND LIGHT EMITTING DIODE
SUBSTRATES FOR PACKAGING FLIP-CHIP LIGHT EMITTING DEVICE AND FLIP-CHIP LIGHT EMITTING DEVICE PACKAGE STRUCTURES
FLEXIBLE LIGHTING-PHOTOVOLTAIC COMPOSITE MODULE AND MANUFACTURING METHOD THEREOF
LDMOS CHC RELIABILITY
SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
Low Sheet Resistance GaN Channel on Si Substrates Using InAlN and AlGaN Bi-Layer Capping Stack
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
SEMICONDUCTOR EPITAXIAL STRUCTURE AND METHOD FOR FORMING THE SAME
Field-Effect Semiconductor Device and Manufacturing Therefor
SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
ORGANIC ELECTROLUMINESCENCE DISPLAY AND DRIVING METHOD THEREOF
HYBRID DRIVING MANNER ORGANIC LIGHT EMITTING DIODE DISPLAY APPARATUS
DISPLAY PANEL AND GATE DRIVER WITH REDUCED POWER CONSUMPTION
