| 摘要 |
PURPOSE:To contrive improvement in electrical characteristics and reliability of a field effect transistor by a method wherein an oxide film is formed by performing a heat treatment wherein a light irradiation is mainly used in the oxidizing atmosphere having a halogen element. CONSTITUTION:An oxide film 13 is formed on one main surface of a semiconductor substrate 11. At that time, said oxide film 13 is formed by heating in such a manner that a light irradiation is mainly used in the oxidizing atmosphere having a halogen element. As a result, a rising or falling temperature can be obtained with an excellent controllability in a short period without giving no adverse effect on the substrate 11, thereby enabling to suppress the irregularity of the thickness of the film 13 within + or -5%. |
