| 摘要 |
PURPOSE:To stably measure the potential of the point to be measured on the semiconductor device surface without receiving an influence of the potential around the point to be measured using an electron beam tester which utilizes a strobo scanning type electron microscope. CONSTITUTION:A pattern of aluminium film A is formed further through the inter-layer insulating film on the film 21 to be measured consisting the polycrystalline silicon film P formed on a semiconductor substrate through an insulating film. Said layer 21 to be measured is connected to an electrode 23 made of said aluminium film A through the contact hole 22 and a shield conductive film 24 consisting of the aluminium film A connected to the ground potential is disposed in such a manner as surrounding said electrode 23. In the semiconductor device mentioned above, the electrode 23 to be measured is surrounded by the shield conductive film 24 kept at the ground potential and therefore influence of potential of signal lines is shielded by the shield conductive film 24. Accordingly, when said electrode 23 is irradiated with electron beam, the released secondary electrons can be detected by the secondary electron detector without influence of field of elements and signal lines near the electrode 24. |
