| 摘要 |
PURPOSE:To enable to control simply the taper angle of an oxide film to be formed with a contact hole by a method wherein the oxide film formed on a semiconductor substrate is exposed to plasma, the surface of the oxide film thereof is treated with a surface modifying agent, and after patterning is performed using a resist, the oxide film is etched with an NH4F solution. CONSTITUTION:When the surface of an SiO2 film 23 formed on a semiconductor substrate 21 is exposed to plasma using a plasma device, oxygen atoms in the SiO2 film 23 are replaced with fluorine atoms according to fluorine plasma. Then, a resist 24 is applied, and patterning is performed according to a PEP. Before the resist 24 thereof is to be applied, after the surface is modified according to the vapor of a surface modifying agent, etc. to improve adhesion between the resist 24 and the SiO2 film 23, the resist 24 is applied. The SiO2 film 23 is etched according to an NH4F solution. Then, the resist 24 is removed, Al 25 is evaporated, and patterning is performed. |
