| 摘要 |
PURPOSE:To totally eliminate the generation of unsatisfactory characteristics of a device by a method wherein, when the palladium silicide electrode of an Si semiconductor device is going to be formed into the prescribed form by etching, an etchant solution of palladium, consisting of ammonium iodide of 4wt% or above, iodine of approximately 0.01wt% and water for the remainder, is used. CONSTITUTION:An N type region 2 is formed on a P type Si substrate 1 by diffusion or by performing ion implantation, and an SiO2 film 3 is generated on the whole surface by performing a heat treatment. Then, an aperture 4 is provided on the film 3 corresponding to the region 2 by performing a photoetching method, and a Pd film 5 is coated on the whole surface including the aperture 4. Subsequently, a heat treatment is performed at the temperature of 150 deg.C or above, a palladium silicide layer 6 is formed in the vicinity of the aperture 4 by having the film 5 and the region 2 reacted each other, and then a non-reacted film 5 is removed using the mixed solution of ammonium iodide and iodine. At this time, the composition of solution is formed as follows: 4wt% or above ammonium iodide, 0.01wt% or above iodine and water for the remainder. The above etchant is used, and an Al electrode 8 is coated on the remaining layer 6 through the intermediary of Ti-W alloy film 7. |
