| 摘要 |
PURPOSE:To reduce the dispersion among bits due to pin holes, etc. by a method wherein a photoconductor in the titled device is formed in a structure of no isolation for every bit. CONSTITUTION:The photoconductor 2 is adhered on a substrate 1 in a long band form, and this photoconductor 2 is formed in an integral body without isolation in structural manner. The electrical isolation in bits of the photoconductor 2 is performed by means of electrodes 3. Thereby, grooves 4 are formed so as to isolate the electrodes 3 and edge parts, covered with these electrodes 3, of this photoconductor 2. The line of electric force generated in an image sensor of such a structure generate so as to swell to the side part over an electrode width W, and the part corresponding to the width (w) of the groove 4 functions in by-pass manner. Thus, even when there is defect such as pin holes within the electrode width W, the influence thereby is inhibited by this by-pass. In this case, however, the width (w) of the groove 4 is determined so that the maximum stretch width of the line of electric force does not extend to an adjacent photoconductor. Thereby, the mutual influence of the line of electric force can be eliminated. |
