发明名称 PLASMA VAPOR GROWTH DEVICE
摘要 PURPOSE:To form films which have the same film structure and further preferable coating property at the stepwise difference on the side faces of ground stepwise difference and a flat face by applying a DC voltage between an anode and a cathode. CONSTITUTION:Anode 2 and cathode 3 of flat plate shape are opposed in a reaction vessel 1. A heater 4 is provided under the cathode 3. A substrate 5 to form a vapor grown film is placed on the cathode 3, and heated by a heater 4. On the other hand, a high frequency power source 6 and a DC power source 7 are coupled through a matching unit 8 to the anode 2 from the exterior of the vessel 1. In other words, the voltages of high frequency and DC are simultaneously applied between the electrodes.
申请公布号 JPS59169139(A) 申请公布日期 1984.09.25
申请号 JP19830042339 申请日期 1983.03.16
申请人 TOSHIBA KK 发明人 HAZUKI RIYOUICHI
分类号 H01L21/205;C23C14/34;H01L21/31 主分类号 H01L21/205
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