| 摘要 |
PURPOSE:To prevent the production of hot electrons and to enable to operate a memory device at a high speed by selectively setting the potential of a bit wire connected to the other terminal of a transistor to the third or fourth potential to write information in a memory capacity and providing means for reading out the information. CONSTITUTION:The second conductive type (N type) well region 12 is formed in the first conductive type (P type) semiconductor substrate 11, P<+> type impurity regions 13, 13 which respectively become a source and a drain are formed, and a gate electrode 15 is formed through a gate insulating film 14 on between the regions. A P<+> type impurity region 16 is coupled to the regions 13, and an electrode 18 is formed through an insulating film 17 thereon. Further, a wiring layer 19 which forms the bit line is connected to the region 13. The first potential VBB and the second potential VDD are respectively applied to the substrate 11 and the region 12, the potential of a word line has the amplitude of the third potential VCC and the first potential VBB, and the amplitude of the bit line has the amplitude between the potential VCC and the fourth potential VSS. |
