| 摘要 |
PURPOSE:To prevent the occurrence of a stepwise disconnection and to improve the yield and reliability by previously forming an insulating film of the prescribed shape having a taper angle on a thin polycrystalline silicon film, implanting silicon ions and then removing an unnecessary region. CONSTITUTION:A polycrystalline silicon layer 2 is formed on an amorphous substrate 1, and an insulating film 3 is further accumulated. Then, an insulating film 3' of the prescribed shape having a taper angle is formed. Subsequently, silicon ions 4 are implanted, a damage region 5 is formed in the silicon layer, etched by a CDE method, thereby forming an insular polycrystalline silicon region 6 having the prescribed taper angle. Then, the region 6 having the taper angle and the substrate 1 are covered entirely with an insulating film 7. Thereafter, phosphorus ions are implanted to form a source and drain region 8, source, gate, drain electrodes 9, 10, 11 are formed of aluminum, sintered in forming gas, thereby producing an aluminum gate MOSFET. |
