发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for forming a groove in a semiconductor substrate is disclosed. The groove is formed in two steps. In the first step, a first shallow groove is formed in the semiconductor substrate and then a first mask pattern is selectively formed on the wall of the first groove. A second groove is formed in the bottom surface of the first groove using the first mask pattern as a mask. Subsequently the first mask is etched off. The obtained groove may be buried with an insulating material or an electrode material.
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申请公布号 |
US4472240(A) |
申请公布日期 |
1984.09.18 |
申请号 |
US19820410081 |
申请日期 |
1982.08.19 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KAMEYAMA, SHUICHI |
分类号 |
H01L21/308;H01L21/762;H01L21/768;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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