| 摘要 |
PURPOSE:To perform the increase in a short gate and the minimization of a series resistance between a source and a drain by forming an N<+> type conductive layer and a semi-insulating layer by a selective epitaxial growth method on an N type active layer of a window of an insulating film, and forming a lateral growth of the semi-insulating layer on the insulating film. CONSTITUTION:With an insulating film 13 as a mask an N<+> type conductive layer (N<+> type layer) 14 and a semi-insulating layer 15 are epitaxially laminated by a selective epitaxial growth method according to an MO-CVD method on an N type active layer 12 of a window of the film 13. The selective epitaxial growth of this layer 14 is stopped to the degree near the surface of the film 13 of the growth surface, supplied gas flow to a growing reaction system is subsequently controlled, and the selective epitaxial growth of the layer 15 is executed. In this selective epitaxial growth, lateral growths 16, 17 are formed on the film 13, and the selective epitaxial growing conditions are set so that a distance L2 between the lateral growths 16 and 17 becomes desired gate length Lg. |
