| 摘要 |
PURPOSE:To manufacture photoconductive CdS having sensitivity of light of longer wavelengths by calcining CdS contg. a small amount of In together with a proper amount of a flux, removing the flux by washing, carrying out calcination again, and treating the surface of the resulting CdS with sulfuric acid. CONSTITUTION:CdS contg. In by 5-30X10<-4> mole per 1 mole CdS or further contg. Cu by about 1-15X10<-4> mole is mixed with >=20wt%, preferably about 30-50% flux such as CdCl2-NaCl mixture, and the prepd. mixture is calcined at a temp. >=50 deg.C above the m.p. of the flux, preferably <= about 600 deg.C. The calcined CdS is washed with water or the like to remove the flux, and the CdS is calcined again at <= about 500 deg.C, preferably about 400-450 deg.C. The surface of the resulting CdS is then treated with 0.5-5N sulfuric acid to obtain high resistance CdS having a uniform and simple grain shape. The CdS has sufficient sensitivity to light of longer wavelengths and small optical memory, and it ensures sufficient dark potential.
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