| 摘要 |
PURPOSE:To prepare a molded article of high-purity and high-density SiC, by placing a substrate consisting of a heat-resistant material such as graphite, etc. on an alpha-SiC resinous crystal region formed at outer periphery part of core, producing SiC. CONSTITUTION:The graphite core 2 is formed at an approximately central position between the side walls 1 and 1' of refractory brick, and the raw material 3 consisting of uniformly blended silica and a carbon material is packed around it. The lamellar graphite substrate 5 is inserted into the alpha-SiC resinous crystal region 4 shown by the dotted lines in the radiant direction having a core around the core 2 as an axis. A part in contact with the top face of the core 2 having heat generation by electricity application reaches about 2,900 deg.C, the void part 6 considered to be based on decomposition of SiC is formed, and the alpha-SiC resinous crystal region 4 is made at the outer periphery part around the core. Finely produced SiC crystal nucleus is grown and the dense crystal layer 7 having about 3.2 specific gravity is formed on the face of the graphite substrate (bottom face of the figure) 5 preinserted into the alpha-resinous crystal region crossing in the radiate direction having the core 2 as the axis. |
