| 摘要 |
PURPOSE:To enable to obtain large mutual conductances and good high frequency characteristic by optimizing the interval between operating layers formed on both sides of the operating layer immediately under a gate electrode and the gate electrode. CONSTITUTION:On a semi-insulation semiconductor crystal substrate 1, the operating layer 12 is provided under the Schottky gate electrode 3, and the operting layer 11 whose carrier number per unit area is larger than that of the layer 12 under an ohmic source electrode 4 and between the electrodes 3 and 4. Besides, the operating layer 13 whose carrier number per unit are a is larger than that of the layer 12 is provided under an ohmic drain electrode 5 and between the gate and drain electrodes. The interval approximately the thickness of the layer 12 is provided between the layers 11, 13 and the electrode 3. Thereby, the clearance between the layers 11, 13 and the electrode 3 becomes the optimum interval, accordingly large mutual conductances can be obtained, and the good high frequency characteristic can be obtained by preventing the increase of the capacitances between the gate and source and the gate and drain.
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