| 摘要 |
PURPOSE:To contrive to miniaturize the protecting structure for the titled element by a method wherein the height of a flow stop adjacent to said element, among the stops arranged in the outer periphery of said element respectively, is made lower than the height of the stop in the outer periphery. CONSTITUTION:The flow of resin 5 is inhibited by the flow stop 6 provided adjacent to the semiconductor element 1, and the flow of resin 3 by the stop 7 arranged in the outer periphery. First, the arrangement of the flow stop 6 inhibits the flow of the resin 5, therefore the resin 5 after hardening can be easily obtained in uniformity. Besides, since the flow of the rsin 5 can be inhibited, the adhesion force of the resin 3 to a wiring substrate 2 can be obtained sufficiently even with the flow stop 7 of a relatively small outer shape. Accordingly, there is a small area of occupation of the protecting resin to said element on the wiring substrate 2. |
