| 摘要 |
PURPOSE:To form an element isolating region adapted for highly integrating by more simple method by selectively etching a semiconductor substrate to form a groove, and selectively forming a silica film forming agent for burying the groove by utilizing a photoresist. CONSTITUTION:After a silicon oxidized film 2 is formed on the surface of a P type semiconductor wafer, a photoresist film 3 is coated, and a hole 4 is formed by photolithography. Then, the hole 4 of exposed silicon wafer 1 is dry etched at the film 3, thereby selectively forming a groove 6' on the wafer 1. Then, a silica film forming agent is rotatably coated. At this time an oxidized film 5 by silica film is formed only on the groove 6' of the hole 4 of the wafer 1 due to the property of the film 3 to repel the silica film forming agent. Then, the film 3 is removed by a photoresist isolating agent. |
