| 摘要 |
PURPOSE:To manufacture an MESFET, drain dielectric resistance thereof is high and reliability thereon is excellent, with high yield and superior reproducibility at low cost by setting the titled transistor so that a peak in electron concentration is positioned near a crystal surface through an ion implantation at a preceding stage through an insulating film, removing the insulating film and executing the ion implantation at a subsequent stage and an annealing. CONSTITUTION:An insulating film such as an oxide film (SiO2) 46 is deposited first in order to form an ohmic contact layer (an N<+> layer) on an operating layer 41 shaped on a GaAs semi-insulating substrate 40 through an epitaxial growth method or an ion implantation method, and ions are implanted at a preceding stage. The SiO2 film 46 is etched by diluted fluoric acid and removed, and Si ions are implanted selectively to impurity layers 47 as an ion implantation at a subsequent stage at least once from the surface. Si Ions are activated through an annealing at a temperature of 850 deg.C, and N<+> layers 42 as the high concentration layers of source-drain regions are formed. The upper sections of the N<+> layers 42 are patterned as source-drain electrodes, and AuGe is evaporated. |
