发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 PURPOSE:To inhibit the variation of potential of a shielding gate region effectively, and to improve the controllability of output characteristics by forming a means inhibiting the storage of carriers generated by incident rays to the shielding gate region. CONSTITUTION:Source electrodes 22 are connected and formed among adjacent cells in exposed sections in source regions 16. Transparent control gate electrodes 24 are formed to the exposed sections of control gate regions 14 through insulating layers 26. The insulating layers 26 consist of films such as oxide films, and are shaped extended onto the source electrodes 22. The control gate electrodes 24 are formed along the upper sections of the insulating layers 26. Informations stored in either cells can be read because the direction of connection of the control gate electrodes 24 and the direction of connection of the source electrodes 22 cross. Shielding gate electrodes 18E can apply fixed voltage to the whole shielding gate regions 18.
申请公布号 JPS59158552(A) 申请公布日期 1984.09.08
申请号 JP19830030929 申请日期 1983.02.28
申请人 FUJI SHASHIN FILM KK 发明人 NISHIZAWA JIYUNICHI;TAMAMUSHI NAOSHIGE
分类号 H01L29/80;H01L27/146;H01L31/10 主分类号 H01L29/80
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