| 摘要 |
PURPOSE:To obtain a reversely inclined layer of a minute pattern fitted to a lift-off through one-time ultraviolet beam irradiation without generating an excessive boundary layer by laminating and forming a photosensitive film as a first layer and a photosensitive film as a second layer, a kind thereof is the same as the film but a gamma value and sensitivity thereof differ, on a semiconductor substrate and beam-transferring and developing the surface. CONSTITUTION:A first positive type resist layer 12 photosensitized to far ultraviolet beams is applied on a semiconductor substrate 11 as a photosensitive film as a first layer, and a second positive type resist layer 13, a kind thereof is the same as the layer 12 but a gamma value and sensitivity thereof are lower, is laminated and applied onto the layer 12. A solvent contained in these layers is evaporated at a proper temperature, ultraviolet beams 15 are irradiated through mask patterns 14, and resists in exposed sections are removed through development. Accordingly, development advances up to the layer 12 from the layer 13 while intruding to the inside of the layer 12, and reversely inclined layers effective for a lift-off are obtained, thus preventing the generation of an excessive boundary layer between the layers 12 and 13. |
