| 摘要 |
<p>PURPOSE:To improve the workability of the post process and improve the luminous efficiency by forming a P-N junction in the 100 plane of a wafer, forming grooves by inclination to the direction of perfect cleavage of a crystal, and isolating the element based on the grooves. CONSTITUTION:The compound semiconductor wafer 6 having the P-N junction 5 on the 100 plane is placed on a sheet 4, and the grooves 7, 7... are formed by dicing. This is done by sliding a dicing edge along the direction appox. 45 deg. off from the direction of perfect cleavage, and a chipping 8 hardly generates. Thereafter, the element is isolated by pressing from the back surface of the sheet 4. The chipping generates only one-several tenths of cutting. After isolation, the elements are exfoliated from the sheet 4 with vacuum tweezers, etc.</p> |
