| 摘要 |
PURPOSE:To enable to effectively obtain a desired output of a sensor without occurrence of an erroneous operation by shielding a light to a circuit element which is feasibly affected by the effect of a light at least in a peripheral circuit. CONSTITUTION:This IC has a p type silicon substrate 2, an n-type collector region 30a formed by epitaxial growth thereon, a collector region 3b formed by n type diffusion, isolating regions 4, 4 formed by p type diffusion, a base region 5 formed similarly by p type diffusion, an emitter region 6 formed by n type diffusion, oxidized films 7, 7 and emitter aluminum deposited wirings 8. The wirings 8 have a pattern capable of shielding a light by covering the left half 5a of the region 5. The right half 5b of the region 5 is also covered with a base aluminum deposited wirings 8' to be shielded from the light. Therefore, the right and left halves 5a, 5b of the region 5 are shielded from the light by the wirings 8, 8'. |
