| 摘要 |
The invention relates to a process for the defined etching of vias by means of plasma etching through an SiO2 layer produced on a semiconductor substrate which accommodates the doping structure of the semiconductor device to be produced, in which process underetching of the photoresist etching mask responsible for dimensioning the vias is avoided. For this purpose, according to the invention, the reaction gas used to produce the etching plasma takes the form of a mixture of trifluoroethylene and hexafluoroethylene. In addition, the gas flow in the treatment vessel used to carry out the etching operation and the other conditions are adjusted in such a way that the reaction gas mixture converted into a plasma extends parallel to the surface of the semiconductor substrate wafer and, consequently, parallel to the surface of the two electrode plates producing the plasma.
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