| 摘要 |
PURPOSE:Practically improved glass for semiconductor device having low polarizability and improved water resistance, having a specific constitution of ZnO, GeO2, B2O3 and SiO2. CONSTITUTION:Glass for semiconductor device, glass consisting of 40-65wt% ZnO, 1-20wt% GeO2, 10-40wt% B2O3, and 1-20 wt% SiO2 as essential components, having 0.35-0.70 molar polarizability and 0.05-0.3% water resistance. PbO glass has been used as the glass of this kind. It is fluidized at low temperature and stable glass, but it has poor water resistance, and problems of deterioration of C-V characteristics of manufactured device caused by high polarizability action of Pb<2+>. The problems are dissolved by the use of the glass having the above-mentioned composition, low polarizability and improved water resistance.
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