| 摘要 |
PURPOSE:To obtain a field effect thyristor which has a low pinch off voltage and is excellent in both forward directional voltage drop and switching characteristic by forming a transvers edirectional channel part between a buried gate region and a surface gate region. CONSTITUTION:A p type region serving as the buried gate region 18 is formed on the surface of an n type semiconductor substrate 11, and an n type high resistant layer is formed thereon by epitaxial growing method. The surface gate region 14 is formed on the surface of the epitaxial layer by a selective diffusion method, and then the width of the channel part 21 is controlled by controlling the diffusion depth. An n type cathode region 13 is formed on the surface of the epitaxial layer by selective diffusion. The formation of the channel part of a narrow width and a long length can be easily performed, and the inside of the channel can be depleted at a low gate voltage, thus enabling the pinch off of the current. |
