| 摘要 |
PURPOSE:To sufficiently protect the wiring layer consisting of aluminium or aluminium alloy from contamination and also prevent corrosion and its elution by forming an aluminium fluoride film on the surface of metal wiring layer consisting of aluminium or aluminium alloy formed on wafer as a contamination preventing film. CONSTITUTION:Wafers 10 are placed in a gas plasma apparatus and the fleon gas is then introduced thereto. Through reaction of fluorine radical and a metal wiring layer 4, a fluoride film 6 of aluminium or aluminium alloy is formed on the surface of metal wiring layer 4 in the thickness of about 100-1,000Angstrom . Thereafter, a protection film 5 consisting of silicon nitride film, etc. is deposited on the wafers 10. Thereafter, the protection film 5 on the bonding pad is selectively eliminated. The fluoride film of aluminium or aluminium alloy on the bonding pad can be eliminated by adequately heating the wafers with water. |
