| 摘要 |
PURPOSE:To obtain a long-life high-reliability laser element, which can bring stripe width, in which currents in an active layer flow concentrically, to predetermined narrow width, by forming a striped trapezoid projecting section to the main surface section of a first conduction type semiconductor substrate and forming a second conduction type current constriction layer with the exception of the upper surface of the trapezoid projection section. CONSTITUTION:An n type GaAs current constriction layer (a second conduction type current constriction layer) 11 is formed with the exception of the upper surface of a trapezoid projecting section 10a on a p type GaAs substrate (a first conduction type semiconductor substrate) 10, and a p type AlxGa1-xAs clad layer 4, a p type AlyGa1-y As active layer 3, an n type AlGa1-xAs clad layer 2 and an n type GaAs layer 5 are formed on the layer 11. The width of the upper surface of the trapezoid projecting section 10a can be realized easily to not more than 2mum width with excellent reproducbility, and all of currents crossing the semiconductor substrate 1 concentrically pass and flow through only a section corresponding to the upper surface of the trapezoid projecting section 10a of the p type AlGaAs active layer 3, thus eliminating a possiblity that a crystal defect is generated in the active layer, then relaizing a long-life high-reliability laser element. |
