| 摘要 |
PURPOSE:To contrive to improve an adhesiveness for bonding a low-fusing point metal and a quartz substrate together and to enable to form a silicon thin film uniformly on the whole surface of the substrate by a method wherein the thin film of the low-fusing point metal evaporated on the insulating substrate is successively heated, fused and scanned and, after that, accelerated silicon grains are supplied. CONSTITUTION:A 300mum-thick quartz substrate is provided with a substrate holder 6 and a vacuum evacuating port 1 is opened for exhausing. A boat 9 for tin evaporation is heated and a tin thin film with a film thickness of 1mum is evaporated on the surface of the quartz substrate. Then, the fusing and scanning of the tin thin film are performed using an electron gun 4. The substrate holder is heated, the substrate temperature Tsub is maintained at 600 deg.C and silicon is made to evaporate from a silicon evaporation source 3 in such a condition that the deposition speed thereof is 0.2mum/min or thereabouts. Argon gas is introduced into from an inert gas-introduction regulative valve 2. When a high-frequency power is supplied to a high- frequency coil 4 for ionization, the argon gas is discharged and evaporated silicon is inonized. A negative voltage is added to the substrate holder as an acceleration voltage by a direct- current high-voltage power source 8, a shutter 7 is opened and the growth of a silicon thin film is started. When the film reached to the desired thickness, the shutter 7 is closed, the discharge is standstilled, the evaporation of is stopped and the growth is finished. |
