发明名称 VERTICAL TYPE REACTION FURNACE
摘要 PURPOSE:To prevent the adhesion of foreign substance on the surface of a wafer and to contrive uniform heating of the wafer by a method wherein a cover, to be arranged on the upper part of a susceptor opposing to it, and a heater which is used to heat the cover are provided. CONSTITUTION:A base stand 7 has a susceptor 1, consisting of silicon carbide on which a silicon wafer 2 will be placed on the upper surface, located in the center part. Also, a reaction gas feeding tube 4, which passes through the susceptor 1 and the base stand 7, is provided in the center part of the susceptor 1. A disc-shaped cover 13, consisting of stainless steel, silicon carbide, quartz and the like, is installed on a bell jar 8 through the intermediary of a fixture 14. Said cover 13 in closed state is provided above the susceptor 1 in parallel with each other. Also, the cover 13 is positioned in such a manner that it covers the entire susceptor. Besides, a heater 15 which heats up the cover 13 is built- in in the cover 13.
申请公布号 JPS59149020(A) 申请公布日期 1984.08.25
申请号 JP19830022755 申请日期 1983.02.16
申请人 HITACHI SEISAKUSHO KK 发明人 TAKEI ICHIROU;KITAHARA TOSHIAKI
分类号 C23C16/46;H01L21/205;H01L21/31 主分类号 C23C16/46
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