| 摘要 |
PURPOSE:To obtain an SiO2 film at a low temperature by a method wherein O2 gas is introduced to be mixed in high order silane gas indicated by the general formula SinH2n+2 {(n) is an integer of 2 or more at this time}, and mixed gas thereof is thermally decomposed to deposite SiO2 on a substrate. CONSTITUTION:The outer periphery of a reaction tube 10 consisting of quartz glass is surrounded with a heater 20 of halogen lamp, etc., a supporting base 30 manufactured of Si is accommodated therein, a substrate 40 of aquartz glass, Si, Sapphire, SUS, etc. is put thereon, a thermocouple 45 is fixed thereto, and an output part is led out outside. Moreover, a raw material gas supply part 50 is provided to one edge of the reaction tube 10, and silane gas 60, carrier gas 70, and O2 gas 80 are flowed therein through respectively flowmeters 63, 73, 83 and valves 61, 71, 81. Moreover, an exhaust gas outlet part 90 is provided to another edge of the reaction tube 10. A film forming device is constructed in such a way, high order silane gas indicated by SinH2n+2 {(n) is the integer of 2 or more} and O2 gas are mixed and sent therein, and thermally decomposed to generate an SiO2 film on the substrate 40. |
