| 摘要 |
PURPOSE:To obtain an Ni electrode generating no exfoliation by a method wherein the Ni thin film forming surface of an Si wafer is finished to form a mirror surface, the Ni thin film of thickness of the degree of 300Angstrom or less is adhered thereto, and heat treatment is performed at the temperature of 300- 600 deg.C. CONSTITUTION:The surface of an Si wafer is finished to form a mirror surface using a mixed liquid consisting of hydrofluoric acid, nitric acid, acetic acid made the mixing ratio to 5:3:3, and an Ni thin film of thickness of the degree of 300Angstrom or less is adhered thereto according to vacuum evaporation, sputtering, electroless plating, etc. At this time, the reason why film thickness is specified to the degree of 300Angstrom , it is because when thickness is thicker than that, the thin film itself is crystallized to be stabilized, while reactivity with Si is deteriorated. Moreover, when the film becomes thinner, the thin film forms an island construction, the film gets into heterogeneously, and it is not desirable. After then, the film is heated for about 30min at 300-600 deg.C in an N2 atmosphere, adhesion between Si and Ni is increased, and ohmic resistance is also reduced. Accordingly, adhesion of the Ni thin film to the mirror surface, which is difficult hitherto, is facilitated and moreover made to possible. |
