| 摘要 |
PURPOSE:To manufacture an effective device containing a P-N junction, electrical characteristics thereof do not deteriorate, by forming a second conduction type semiconductor thin-film in an opening in an insulating film, penetrating a predetermined position, diffusing an impurity and forming a second conduction type region having large impurity concentration. CONSTITUTION:A P type region 2 is formed to the surface layer of an N type silicon substrate 1, the surface is coated with a silicon dioxide film 7, and an opening is bored. An N type silicon single crystal film 5 in low concentration is grown. A silicon dioxide film 7' is formed on a silicon surface, and one part is removed. An N type impurity in concentration of not less than decuple as high as impurity concentration in the silicon single crystal film 5 such as phosphorus atoms are diffused up to the P type region 2 while penetrating the silicon single crystal film 5, and N type regions 3, 8 are formed. A film 7' is bored partially, and metallic electrodes 6, 6' are formed. Accordingly, breakdown is generated in a junction section between the P type region 2 and the N type region 3, and is not generated in a junction section between the P type region 2 and the N type silicon film 5. |
