| 摘要 |
PURPOSE:To enable to suppress the inroad generating due to selective oxidization by a method wherein a polycrystalline semiconductor is formed on the whole surface including the silicon nitride pattern located on an active region, and after a channel stopper region has been formed in offset form and in an effective active region width, a polycrystalline semiconductor film and a field region are oxidized at once. CONSTITUTION:A SiO2 film 2 is grown on a P type Si substrate 1 by performing a thermal oxidization, and an Si3N4 film 3 is deposited thereon. A resist film 4 is formed on the active region, the Si3N4 film on the region other than the active region is removed by performing an etching using the resist film 4 as a mask, and an Si3N4 film pattern 3' is formed. After the resist film 4 has been removed, a polycrystalline silicon 15 is formed on the whole surface, a P<+> type region 16 is formed as a channel stopper region on a field part by ion-implanting boron on the whole surface. An etching is performed on the polycrystalline silicon 15 using an anisotropic etching method in order to suitably form the oxide film on the field region, said oxide film is not completely removed by etching, and approximately 500Angstrom of the film is left. A wet oxidation is performed, and a thick field oxide film 18 is selectively grown. |
