| 摘要 |
PURPOSE:To enable to further increase the degree of integration of the titled device by a method wherein the first and the second polycrystaline silicon layers are laminated in such a manner that an interlayer insulating layer is pinched between them, and a silicon nitride film is provided at the part located below a contact hole. CONSTITUTION:An N<+> layer 12 is provided on a P type silicon substrate 11. The lower electrode wiring 15 of a polycrystalline silicon is selectively provided on the surface of a part of a gate oxide film 13 and a part of a field oxide film 14, and the first insulating film covering the above is composed of a silicon oxide film 16 and a silicon nitride film 17. The upper electrode wiring 19 of polycrystalline silicon is provided on a gate oxide, and the second insulating film covering the above is composed of a silicon oxide film 20 and a phosphorus glass 18. External wirings 21, 22 and 23 are provided on the lower electrode wiring 15, the upper electrode wiring 19 and the aperture part of an N<+> layer 12 respectively. As the silicon nitride film 17 is not corroded by the corrosive liquid used for providing an aperture on the second insulating film, the insulation between the upper and the lower electrode wirings can be maintained. |
