| 摘要 |
PURPOSE:To obtain a semiconductor device, a radiant power output therefrom does not lower even on an acceleration and which is effective as a light source for an optical fiber or light-beam communication, by keeping difference of mixed crystal ratio between an active layer and a carrier implantation layer, the film thickness of the active layer, etc. respectively within specific ranges. CONSTITUTION:Difference of mixed crystal ratio between an active layer 24 and a carrier implantation layer 25 is brought to 0.1 or more, the film thickness of the active layer 24 to approximately 0.5-0.1mum, and the film thickness of a P type layer 23 interposing between the active layer 24 and a substrate 21 to approximately 10-20mum. For example, a P electrode 22 is formed on one surface of the thick P-Ga1-XAlXAs semiconductor substrate 21(X>=0.2) for transmitting beams and the P-Ga1-XAlXAS (Xapprox.=0.2) layer 23, the P or N-Ga1-XAlXAs (Xapprox.= 0.08) layer 24 as the active layer, the N-Ga1-XAlXAs (Xapprox.=0.2) layer 25 as the carrier injection layer, and an N<+>-Ga1-XAlXAs (Xapprox.=0.01) layer 26 on the other surface through a liquid phase epitaxial method, and a CVD-SiO2 film 27 and an N electrode 28 are further formed, thus completing an element. |
