发明名称 COPPER ALLOY FOR LEAD MATERIAL OF SEMICONDUCTOR APPARATUS
摘要 PURPOSE:To obtain a Cu alloy provided with various characteristics suitable for use as the lead material of a semiconductor apparatus by adding a very small amount of P, As, Cr, Sn, Mg or Mn to a Cu-Ni-Si alloy having a specified ratio in the composition. CONSTITUTION:This Cu alloy is obtd. by adding, by weight, 0.001-2.0% in total of one or more among 0.001-0.1% P, 0.001-0.1% As, 0.01-1.0% Cr, 0.01-1.0% Sn, 0.01-1.0% Mg and 0.01-1.0% Mn and one or more among 0.001-0.1% Sb, 0.01-1.0% Fe, 0.01-1.0% Co, 0.01-1.0% Al, 0.01-1.0% Ti, 0.01-1.0% Zr, 0.01-1.0% Be and 0.01-1.0% Zn as secondary components to an alloy consisting of 0.4-1.0% Ni, 0.1-0.3% Si, <=10ppm O2 and the balance Cu with inevitable impurities. The resulting alloy satisfies all of characteristics required by a lead material such as heat radiating properties, heat resistance, strength, solderability and adhesive strength to plating.
申请公布号 JPS59145745(A) 申请公布日期 1984.08.21
申请号 JP19830233698 申请日期 1983.12.13
申请人 NIPPON KOGYO KK 发明人 TSUJI MASAHIRO;YAMAMOTO MICHIHARU
分类号 C22C9/00;C22C9/06;H01L23/48 主分类号 C22C9/00
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