| 摘要 |
PURPOSE:To eliminate the bent of a semiconductor material which occurs in case of securing a semiconductor substrate to a supporting metal plate by forming the semiconductor base of a semiconductor substrate and providing electrode layers made of aluminum on both sides of the substrate. CONSTITUTION:An aluminum electrode layer 4 is formed on the upper surface of a semiconductor substrate 1, and an aluminum electrode layer 5 is similarly formed on the othe side surface of the substrate 1. In this case, since the thickness of the substrate 1 is 1mm or larger in a high withstand voltage semiconductor device, the thicknesses of the layers 4, 5 are 10-25mum, the layers are adhered by a method such as evaporation at relatively low temperature such as approx. 300 deg.C on the substrate and formed on both side surfaces of the substrate 1, a bent of the semiconductor base made only of the substrate 1 does not almost occur. |
