| 摘要 |
PURPOSE:To reliably insulate a semiconductor device by covering the side wall of a contacting hole with an insulating layer. CONSTITUTION:After a silicon oxidized film 2 for isolating elements is formed on a semiconductor substrate 1, a gate insulating film 3 and a gate electrode 4 are formed. Source and drain regions 6, 7 are formed by ion implanting in self- aligning manner with the electrode 4, an impurity is activated by heat treating, and a phosphorus glass layer 5 is formed on the overall surface. After contacting holes 8, 9 for removing electrodes are opened by lithographic technique and phosphorus glass reactively sputtering technique, silicon nitrided films 14, 15 are formed on the overall surface which includes the side walls of the holes 8, 9. After the silicon nitrided film except the contacting hole side wall is removed, an aluminum layer which forms the wiring layer is covered by sputter depositing. |
