| 摘要 |
Since higher-power Z diodes have various disadvantages, a semiconductor circuit (10) is proposed which has a collector-emitter path of a transistor (14) between input (12) and output (13). The base of the transistor is connected, on the one hand, via a low-power Z diode (15) to the collector of the transistor and, on the other hand, via an ohmic resistor (16) to the emitter of the transistor. Due to the current gain of the transistor, the semiconductor circuit has a comparatively high power, corresponding to a power Z diode, even though a low-power Z diode is used. <IMAGE>
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