| 摘要 |
A thin passivating layer (14) of CdTe is formed on a layer of photoconductive HgCdTe (4) by means of electrochemical deposition. The photoconductive layer (4) is used as a cathode. A first anode (26) is fabricated of tellurium and a second anode (28) is fabricated of an inert substance such as graphite. An electrolyte (30) comprises an aqueous solution of CdSO4 and unsaturated TeO2. Alternatively, electrolyte (30) can be saturated with TeO2, in which case a first anode is fabricated of an inert substance, and an optional second anode is fabricated of cadmium. After purifying the cathode (1) and the electrolyte (30), cadmium and tellurium are simultaneously deposited upon cathode (1). Stoichiometric balance is maintained to maximize the resistivity of the passivating CdTe layer (14). This is accomplished by regulating the deposition voltage of cathode (1) with respect to a saturated calomel electrode (22). In a first embodiment, an n-type region (16) is formed in the p-type photoconductive layer (4) subsequent to electrochemical deposition of the passivating CdTe layer (14). In a second embodiment, the n-type region (16) is formed in the p-type layer (4) prior to electrochemical deposition of the CdTe passivating layer (14).
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