| 摘要 |
PURPOSE:To enable an ion beam with high luminance and a small diameter to be obtained and to improve efficiency of ion beam exposure by performing electrical field evaporation treatment after applying an ion implantation into the end of a Wolfram chip ground by means of electrolyte. CONSTITUTION:After electrolytically grinding the end of a metal chip for an ion source, ion implantation of an impurity is applied into the end and then the impurity is subjected to electrical field evaporation. For an ion implantation, an ion easily subjected to electrical field evaporation such as an Argon ion is implanted. A grid disposition of Wolfram atoms 9 is distorted by implantation of an Argon ion 10 around an implanting position being as a center, and if a wolfram chip in this state is subjected to electrical field evaporation treatment, the Argon atom 1 is easily evaporated and a kink 6 and a step 7 are formed on its trace. A beam with high luminance and small diameter can be obtained by performing ion beam exposure using a wolfram chip having numerous kinks or steps accordingly. |
