发明名称 ALLOY THIN WIRE FOR WIRE BONDING OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to cut down the cost of fine wires used for the titled device by a method wherein one or two kinds or more of Ge, Be and Ca are contained in one or two kinds or more of rare-earth element as occasion demands, thereby enabling to let the remainder have the composition consisting of Cu and inevitable impurities. CONSTITUTION:The rare-earth element is improved in the breaking strength at high temperature and also in the tensile strength at high temperature, and the content of said rare-earth element is designated at 0.0005-2.0%. The ingredient of Ge, Be and Ca, when they are coexisted with rare-earth element, has the function wherein their strength at high temperature will be further increased. The content of said ingredient is to be set at 0.0005-0.5%. After a cold rolling has been performed, prescribed cycles of annealing wherein an annealing at 300 deg.C in vacuum is considered as one cycle, are performed on the wire material. Subsequently, a stripping process is performed using dies. A wire-drawing process and the specified cycles of wire-drawing process, wherein annealing at 300 deg.C in vacuum is considered as one cycle, are performed.
申请公布号 JPS59139662(A) 申请公布日期 1984.08.10
申请号 JP19830014168 申请日期 1983.01.31
申请人 MITSUBISHI KINZOKU KK 发明人 KIYONO AKIRA
分类号 C22C9/00;H01L21/60;H01L23/49 主分类号 C22C9/00
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