| 摘要 |
PURPOSE:To enable to prevent the recrystallization by heat and the damage on the photoconductive film caused by the denatured film quality by diffusion by a method wherein a transparent electrode film, which is formed by performing a sputtering method at low temperature, is provided on the amorphous photoconductive film consisting of an amorphous silicon formed on a substrate. CONSTITUTION:A photoconductive layer 32 consisting of amorphous silicon is formed on the semiconductor substrate. Especially, an amorphous material containing silicon of 50 atomic % or more and hydrogen of 5 atomic % or 50 atomic % is considered desirable. A transparent electrode 33 is formed on the photoconductive film 32. This transparent electrode is formed by deposition by performing a sputtering using the solid solution of 91:9mol percentage with In2O3 and SnO2 for example. At this time, the above is placed on a water- cooled holding plate, is sputtered thereon, and the light-receiving surface is formed without causing thermal effect, because a coating process is performed at a low temperature. |
