| 摘要 |
<p>PURPOSE:To obtain the titled material subject to both excellent thermal conductivity and thermal expansion coeffient causing no troubles such as poisonous property, scarcity and the like by a method wherein powder of W, Mo or alloy with specific grain size is respectively mixed with another powder comprising specific amount of Cu powder and ferric elements to be baked within reducing atmosphere after being pressurized and formed. CONSTITUTION:Powder of W, Mo or W-Mo alloy with mean grain size of 5-10mum is mixed with another powder comprising Cu powder with 5-20wt% of the final product ratio and ferric elements with 0.02-2 gross wt% of said two sorts of powder to be baked within reducing atmosphere after being pressurized and formed. The Cu ratio is specified to be 5-20wt% of the semiconductor substrate material so as to maintain the thermal expansion ratio within the range of 6-8(X10<-6>/ deg.C). On the other hand, the ferric elements (Fe, Ni, Co) are added so as to lower the temperature to produce fine alloy since W, Mo powder may be better-sintered with each other compared with the case of no addition of the ferric elements solidly soluble with either one of W, Mo, W-Mo and Cu solidly solved in W, Mo grains in case of baking to produce an alloy layer. It is not recommended to reduce the added amount of ferric elements down to 0.02wt% or less losing remarkable effect or to exceed 2wt% or more since the ferric elements solidly solved in Cu reduces the thermal conductivity of Cu part contained in a compound alloy.</p> |
