| 摘要 |
PURPOSE:To realize the multilayer mounting structure of a memory storage, and to increase mounting density by arranging the memory storage in three dimensions by superposing a plurality of second substrates, mounting them on a first substrate and connecting a common projecting electrode to a conducting path in the first substrate. CONSTITUTION:Semiconductor elements 3 for memory are fixed to fixing pads 5 in second substrates 11, and connected electrically to the noses of leads 6 extended from projecting electrodes 4 by bonding wires. The semiconductor elements 3 for memory are surrounded by resin frame bodies 7 with fixed height, and a sealing resin 8 such as epoxy resin is injected to seal the semiconductor elements. Each projecting electrode 4...4 in the second substrates 11 is soldered with a conducting path 2 extended from a bus line on a first substrate 1, and the second substrates 11 are supported and fixed and connected electrically. Second substrates 11 are arranged superposed on the second substrates, and their projecting electrodes 4 are superposed to realize multilayer mounting. |
